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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHIMD1PT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Both the CHDTA124T & CHDTC124T in one package. Built in bias resistor(R1=22k, Typ. ) (1) (6) 0.95 0.95 (3) 0.25~0.5 1.4~1.8 (4) SC-74/SOT-457 1.7~2.1 2.7~3.1 0.08~0.2 0.3~0.6 0.935~1.3 0~0.15 2.6~3.0 CIRCUIT 1 R1 3 R1 6 4 Dimensions in millimeters SC-74/SOT-457 CHDTA124T LIMITING VALUES In accordance with the Absolute Maximum Rating System . SYMBOL VCBO VCEO VEBO IC PC TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-04 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Collector Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS -50 -50 -5 VALUE V V V mA UNIT -100 Tamb 25 OC, Note 1 300 -55 +150 -55 +150 junction - soldering point 140 mW O C O C C/W O CHDTC124T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. CHDTA124T CHARACTERISTICS Tamb = 25 C unless otherwise specied. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency CONDITIONS IC= -50uA IE= -50uA IC= -5mA; IB= -0.5mA VCB= -50V VEB= -4V IC= -1mA; VCE= -5.0V IE=5mA, VCE= -10.0V f=100MHz = MIN. -50.0 -50.0 -5.0 - - - 100 15.4 - - - - - - - 250 22 250 TY P . - - - -0.3 -0.5 -0.5 600 26.6 - K MHz MAX. V V V V uA uA UNIT PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS 50 50 5 100 Tamb 25 C, Note 1 O VALUE V V V UNIT mA mW O 150 -55 +150 -55 +150 C O C C/W junction - soldering point 140 O Collector-Emitter breakdown voltage IC= -1mA Not e 1.Pulse test: tp300uS; 0.02. CHDTC124T CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT PARAMETER Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage CONDITIONS IC=50uA IE=50uA VCB=50V VEB=4V IC/IB=5mA/0.5mA IC=1mA; VCE=5.0V IC=5mA, VCE=10.0V f=100MHz MIN. 50 50 5.0 - - - 100 15.4 - - - - - - - TYP. - - - MAX. V V V UNIT Collector-emitter breakdown voltage IC=1.0mA 0.5 0.5 0.3 600 28.6 - uA uA V K MHz DC current gain Input resistor Transition frequency 250 22 250 Note 1.Pulse test: tp300uS; 0.02. RATING CHARACTERISTIC CURVES ( CHIMD1PT) CHDTA124T Typical Electrical Characteristics 1k 500 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current VCE=-5V Fig.2 Collector-emitter saturation voltage vs. collector current -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m -10u -50u -100u -500u -1m -5m -10m 100OC 25OC -40 OC lC/lB=10 200 100 50 20 10 5 2 1 -100u -1m -5m -10m -50m -100m Ta=100OC 25OC -40OC COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) RATING CHARACTERISTIC CURVES ( CHIMD1PT) CHDTC124T Typical Electrical Characteristics Fig.1 DC current gain vs. collector current 1k 500 DC CURRENT GAIN : hFE Fig.2 Collector-emitter voltage vs. collector current COLLECsaturationTOR VOLTAGE : VCE(sat) (V) 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=100OC 25OC -40 OC lO/lI=10 VCE = 5V 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m100m Ta=100OC 25OC -40OC COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (uA) |
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